AFN3422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFN3422W Features
* 100V/3.0A,RDS(ON)=310mΩ@VGS=10V 100V/2.0A,RDS(ON)=320mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application DC/DC Converters Load Switch LED Backlighting in LCD TVs Pin Define Pin 1 2 3 4
Datasheet Details
AFN3422W, AFN3422W-Alfa
Alfa-MOS
439.60 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: AFN3422W, AFN3422W-Alfa.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
📌 All Tags
