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AFN3422W - N-Channel MOSFET

This page provides the datasheet information for the AFN3422W, a member of the AFN3422W-Alfa N-Channel MOSFET family.

Description

AFN3422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 100V/3.0A,RDS(ON)=310mΩ@VGS=10V 100V/2.0A,RDS(ON)=320mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

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Datasheet Details

Part number AFN3422W
Manufacturer Alfa-MOS
File Size 439.60 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3422W Datasheet
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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN3422W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN3422W 100V N-Channel Enhancement Mode MOSFET Features 100V/3.0A,RDS(ON)=310mΩ@VGS=10V 100V/2.0A,RDS(ON)=320mΩ@VGS=4.
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