AFN3456 - N-Channel MOSFET
AFN3456, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descriptio
AFN3456 Features
* 30V/5.6A,RDS(ON)=40mΩ@VGS=10V 30V/4.2A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 4 5 6 Symbol D D G S D D Ordering Information Part Orde
