AFN3400AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descript
AFN3400AS Features
* ID=2.8A,RDS(ON)=36mΩ@VGS=10V
* ID=2.5A,RDS(ON)=40mΩ@VGS=4.5V
* ID=2.2A,RDS(ON)=42mΩ@VGS=2.5V
* ID=1.0A,RDS(ON)=60mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* SOT-23 package design Application
* Power Management in Note book
* LED Displa
Datasheet Details
AFN3400AS, AFN3400AS-Alfa
Alfa-MOS
444.50 KB
30v n-channel mosfet.
This datasheet PDF includes multiple part numbers: AFN3400AS, AFN3400AS-Alfa.
Please refer to the document for exact specifications by model.
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