AFN3400S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFN3400S Features
* 30V/4.0A,RDS(ON)=42mΩ@VGS=10V 30V/3.0A,RDS(ON)=44mΩ@VGS=4.5V 30V/2.6A,RDS(ON)=50mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOT-23-3L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S D Descripti
Datasheet Details
AFN3400S, AFN3400S-Alfa
Alfa-MOS
549.63 KB
N-channel enhancement mode mosfet.
This datasheet PDF includes multiple part numbers: AFN3400S, AFN3400S-Alfa.
Please refer to the document for exact specifications by model.
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