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AFN4116WS

N-Channel MOSFET

AFN4116WS Features

* 20V/ 15A,RDS(ON)=8.5mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=11mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Buck - Low Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Dr

AFN4116WS General Description

AFN4116WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFN4116WS Datasheet (584.57 KB)

Preview of AFN4116WS PDF

Datasheet Details

Part number:

AFN4116WS

Manufacturer:

Alfa-MOS

File Size:

584.57 KB

Description:

N-channel mosfet.

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TAGS

AFN4116WS N-Channel MOSFET Alfa-MOS

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