AFN8206WS Datasheet - Alfa-MOS

20V N-Channel Enhancement Mode MOSFET

AFN8206WS Features

* ID=3.0A,RDS(ON)=11mΩ@VGS=4.5V

* ID=3.0A,RDS(ON)=13mΩ@VGS=2.5V

* ID=2.5A,RDS(ON)=24mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* ESD Protection ( 2KV ) Diode design

* in

* DFN2X3-6L package design Application

* Load Switch

* Portabl

AFN8206WS General Description

AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFN8206WS Datasheet (467.48 KB)

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Datasheet Details

Part number:

AFN8206WS

Manufacturer:

Alfa-MOS

File Size:

467.48 KB

Description:

20v n-channel enhancement mode mosfet.

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AFN8206WS 20V N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN8206WS Features

AFN8206WS General Description

Datasheet Details

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