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AFN8206WS, AFN8206WS-Alfa 20V N-Channel Enhancement Mode MOSFET

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Description

Alfa-MOS Technology General .
AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN8206WS, AFN8206WS-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN8206WS, AFN8206WS-Alfa
Manufacturer
Alfa-MOS
File Size
467.48 KB
Datasheet
AFN8206WS-Alfa-MOS.pdf
Description
20V N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN8206WS, AFN8206WS-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=3.0A,RDS(ON)=11mΩ@VGS=4.5V
* ID=3.0A,RDS(ON)=13mΩ@VGS=2.5V
* ID=2.5A,RDS(ON)=24mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* ESD Protection ( 2KV ) Diode design
* in

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