AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFN8412W Features
* 100V/3.6A,RDS(ON)=300mΩ@VGS=10V
* 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* SOT-223 package design Application
* Motor and Load Control
* Power Management in White LED System
* Push Pull Converter
* LCD TV Invert
Datasheet Details
AFN8412W, AFN8412W-Alfa
Alfa-MOS
345.61 KB
N-channel enhancement mode mosfet.
This datasheet PDF includes multiple part numbers: AFN8412W, AFN8412W-Alfa.
Please refer to the document for exact specifications by model.
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