AFN8412W, AFN8412W-Alfa Datasheet - Alfa-MOS

AFN8412W N-Channel Enhancement Mode MOSFET

AFN8412W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN8412W Features

* 100V/3.6A,RDS(ON)=300mΩ@VGS=10V

* 100V/3.0A,RDS(ON)=310mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* SOT-223 package design Application

* Motor and Load Control

* Power Management in White LED System

* Push Pull Converter

* LCD TV Invert

AFN8412W-Alfa-MOS.pdf

AFN8412W Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN8412W, AFN8412W-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN8412W, AFN8412W-Alfa

Manufacturer:

Alfa-MOS

File Size:

345.61 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN8412W, AFN8412W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN8412W AFN8412W-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

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