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AFP1413

P-Channel Enhancement Mode MOSFET

AFP1413 Features

* -20V/-3.0A,RDS(ON)=125mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=160mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Power Management in Note book Portable Equipment Battery Powered System Net

AFP1413 General Description

AFP1413, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFP1413 Datasheet (523.94 KB)

Preview of AFP1413 PDF

Datasheet Details

Part number:

AFP1413

Manufacturer:

Alfa-MOS

File Size:

523.94 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP1413 P-Channel Enhancement Mode MOSFET Alfa-MOS

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