AFP1800WS Datasheet - Alfa-MOS

AFP1800WS P-Channel MOSFET

AFP1800WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFP1800WS Features

* z -100/-7.0A,RDS(ON)= 50mΩ@VGS= -10V z -100/-5.0A,RDS(ON)= 58mΩ@VGS= -4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design Application z Full Bridge DC/DC Converter z Load Switch Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part

AFP1800WS Datasheet (398.55 KB)