AFP1810 Datasheet - Alfa-MOS

AFP1810 P-Channel MOSFET

AFP1810, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFP1810 Features

* -100/-2.0A,RDS(ON)= 230mΩ@VGS= -10V -100/-1.0A,RDS(ON)= 245mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Full Bridge DC/DC Converter Load Switch Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering

AFP1810 Datasheet (550.87 KB)