AFP4447 Datasheet, Mosfet, Alfa-MOS

✔ AFP4447 Features

-40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Back

✔ AFP4447 Application

Pin Description ( TO-252-2L ) AFP4447 40V P-Channel Enhancement Mode MOSFET Features -40V/ -10A,RDS(ON)= 4

PDF File Details

Alfa-MOS manufacturer logo

Part number:

AFP4447

Manufacturer:

Alfa-MOS

File Size:

880.02 KB

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📄 Datasheet

Description:

P-channel enhancement mode mosfet. AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devi

📥 Download PDF (880.02 KB)

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TAGS

AFP4447 P-Channel Enhancement Mode MOSFET Alfa-MOS