Datasheet4U Logo Datasheet4U.com

AFP4447

P-Channel Enhancement Mode MOSFET

AFP4447 Features

* -40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G

AFP4447 General Description

AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFP4447 Datasheet (880.02 KB)

Preview of AFP4447 PDF

Datasheet Details

Part number:

AFP4447

Manufacturer:

Alfa-MOS

File Size:

880.02 KB

Description:

P-channel enhancement mode mosfet.

📁 Related Datasheet

AFP4401WS P-Channel MOSFET (Alfa-MOS)

AFP4403W P-Channel MOSFET (Alfa-MOS)

AFP4425WS P-Channel MOSFET (Alfa-MOS)

AFP4435W P-Channel MOSFET (Alfa-MOS)

AFP4435WS 30V P-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFP4535W P-Channel MOSFET (Alfa-MOS)

AFP4599W 40V N & P Pair Enhancement Mode MOSFET (Alfa-MOS)

AFP4637W P-Channel MOSFET (Alfa-MOS)

AFP4925W P-Channel MOSFET (Alfa-MOS)

AFP4925WS P-Channel MOSFET (Alfa-MOS)

TAGS

AFP4447 P-Channel Enhancement Mode MOSFET Alfa-MOS

Image Gallery

AFP4447 Datasheet Preview Page 2 AFP4447 Datasheet Preview Page 3

AFP4447 Distributor