AFP4435WS, AFP4435WS-Alfa Datasheet - Alfa-MOS

AFP4435WS 30V P-Channel Enhancement Mode MOSFET

AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFP4435WS Features

* ID=-9A,RDS(ON)=15mΩ@VGS=-10V

* ID=-7A,RDS(ON)=23mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* SOP-8P package design Application

* LED Display

* Load Switch

* CCFL Inverter

* Power Management in Notebook Computer, Pin Define Pin 1 2 3 4

AFP4435WS-Alfa-MOS.pdf

AFP4435WS Datasheet Preview — This datasheet PDF includes multiple part numbers: AFP4435WS, AFP4435WS-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFP4435WS, AFP4435WS-Alfa

Manufacturer:

Alfa-MOS

File Size:

392.49 KB

Description:

30v p-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP4435WS, AFP4435WS-Alfa.
Please refer to the document for exact specifications by model.

AFP4435WS Distributor

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TAGS

AFP4435WS AFP4435WS-Alfa 30V P-Channel Enhancement Mode MOSFET Alfa-MOS