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AFP4435WS

30V P-Channel Enhancement Mode MOSFET

AFP4435WS Features

* ID=-9A,RDS(ON)=15mΩ@VGS=-10V

* ID=-7A,RDS(ON)=23mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* SOP-8P package design Application

* LED Display

* Load Switch

* CCFL Inverter

* Power Management in Notebook Computer, Pin Define Pin 1 2 3 4

AFP4435WS General Description

AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFP4435WS Datasheet (392.49 KB)

Preview of AFP4435WS PDF

Datasheet Details

Part number:

AFP4435WS

Manufacturer:

Alfa-MOS

File Size:

392.49 KB

Description:

30v p-channel enhancement mode mosfet.

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TAGS

AFP4435WS 30V P-Channel Enhancement Mode MOSFET Alfa-MOS

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