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AFP5010S, AFP5010S-Alfa Datasheet - Alfa-MOS

AFP5010S P-Channel Enhancement Mode MOSFET

AFP5010S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFP5010S Features

* -100/-18A,RDS(ON)= 46mΩ@VGS= -10V -100/-10A,RDS(ON)= 52mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP

AFP5010S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP5010S, AFP5010S-Alfa. Please refer to the document for exact specifications by model.
AFP5010S Datasheet Preview Page 2 AFP5010S Datasheet Preview Page 3

Datasheet Details

Part number:

AFP5010S, AFP5010S-Alfa

Manufacturer:

Alfa-MOS

File Size:

604.98 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP5010S, AFP5010S-Alfa.
Please refer to the document for exact specifications by model.

AFP5010S Distributor

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TAGS

AFP5010S AFP5010S-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS