Datasheet Specifications
- Part number
- AS7C332MNTF18A
- Manufacturer
- Alliance Semiconductor Corporation
- File Size
- 462.54 KB
- Datasheet
- AS7C332MNTF18A_AllianceSemiconductorCorporation.pdf
- Description
- 3.3V 2M x 18 Flowthrough SRAM
Description
December 2004 ® AS7C332MNTF18A 3.3V 2M x 18 Flowthrough SRAM with NTDTM .Features
* Organization: 2,097,152 words × 18 bits NTD™architecture for efficient bus operation Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous outApplications
* requiring random access or read-modify-write operations. NTD™ devices use the memory bus more efficiently by introducing a write latency which matches the one-cycle flowthrough read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear. wwwAS7C332MNTF18A Distributors
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