* Fully Synchronous to Positive Clock Edge
* Fast clock rate: 133 MHz
* Multiple Burst Read with Single Write Operation
* Four Banks controlled by BA0 & BA1
* Data Mask for Byte Control (x16,x32)
* Programmable Mode registers - CAS Latency: 1 or 2 or 3
AS4C16M32SC-7TIN Datasheet (1.43 MB)
AS4C16M32SC-7TIN
Alliance Semiconductor
1.43 MB
512m sdram.
Revision History 512M SDRAM 54/86pin TSOP II Package
Revision Details Rev 1.0 Preliminary datasheet
AS4C16M32SC-7TIN AS4C32M16SC-7TIN
AS4C64M8SC-7TIN.
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