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AO4429 P-Channel FET

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Description

AO4429 P-Channel Enhancement Mode Field Effect Transistor General .
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Features

* VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.7mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) ESD Rating: 4KV HBM The AO4429 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected.

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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