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AOB440 N-Channel MOSFET

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Description

www.DataSheet4U.com AOB440 N-Channel Enhancement Mode Field Effect Transistor General .
The AOB440 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.

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Features

* VDS (V) = 60V ID = 75 A (V GS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Av

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