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AON3812 Field Effect Transistor

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Description

AON3812 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
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Datasheet Specifications

Part number
AON3812
Manufacturer
Alpha & Omega Semiconductors
File Size
150.91 KB
Datasheet
AON3812_AlphaOmegaSemiconductors.pdf
Description
Field Effect Transistor

Features

* VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) The AON3812 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD pro

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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