AOT9600 Datasheet - Alpha & Omega Semiconductors

AOT9600 600V N-Channel MOSFET

The AOT1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly int.

AOT9600 Features

* VDS (V) = 700V @ 150°C ID = 1.3A RDS(ON) < 9Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! D G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain

AOT9600_AlphaOmegaSemiconductors.pdf