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BLC9G15XS-400AVT Power LDMOS transistor

BLC9G15XS-400AVT Description

BLC9G15XS-400AVT Power LDMOS transistor Rev.1 * 24 November 2017 Product data sheet 1.Product profile 1.1 General .
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1452 MHz to 1511 MHz.

BLC9G15XS-400AVT Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability

BLC9G15XS-400AVT Applications

* at frequencies from 1452 MHz to 1511 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 810 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V

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Datasheet Details

Part number
BLC9G15XS-400AVT
Manufacturer
Ampleon
File Size
692.47 KB
Datasheet
BLC9G15XS-400AVT-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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