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BLC9G20LS-120V Power LDMOS transistor

BLC9G20LS-120V Description

BLC9G20LS-120V Power LDMOS transistor Rev.5 * 24 May 2017 Product data sheet 1.Product profile 1.1 General .
120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

BLC9G20LS-120V Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
* Designed for broadband operation (1805 MHz to 1995 MHz)
* Lower output capacitance for

BLC9G20LS-120V Applications

* at frequencies from 1805 MHz to 1995 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1805 to 1880 700 28 30 19.2 3

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Datasheet Details

Part number
BLC9G20LS-120V
Manufacturer
Ampleon
File Size
424.22 KB
Datasheet
BLC9G20LS-120V-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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