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BLC9G20LS-470AVT Power LDMOS transistor

BLC9G20LS-470AVT Description

BLC9G20LS-470AVT Power LDMOS transistor Rev.3 * 24 November 2017 Product data sheet 1.Product profile 1.1 General .
470 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

BLC9G20LS-470AVT Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (1805 MHz to 1990 MHz)
* Asymmetric design to achieve optimum efficiency across the band
* Lower output capacitance fo

BLC9G20LS-470AVT Applications

* at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V)

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Datasheet Details

Part number
BLC9G20LS-470AVT
Manufacturer
Ampleon
File Size
708.91 KB
Datasheet
BLC9G20LS-470AVT-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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