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BLC9G20XS-160AV Power LDMOS transistor

BLC9G20XS-160AV Description

BLC9G20XS-160AV Power LDMOS transistor Rev.3 * 24 May 2017 Product data sheet 1.Product profile 1.1 General .
160 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

BLC9G20XS-160AV Features

* Excellent ruggedness
* High-efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (1805 MHz to 1990 MHz)
* Asymmetric design to achieve optimum efficiency across the band
* Lower output capacitance for improved

BLC9G20XS-160AV Applications

* at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo test circuit. VDS = 30 V; IDq = 300 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W)

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Datasheet Details

Part number
BLC9G20XS-160AV
Manufacturer
Ampleon
File Size
811.73 KB
Datasheet
BLC9G20XS-160AV-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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