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BLC9G20XS-400AVT Power LDMOS transistor

BLC9G20XS-400AVT Description

BLC9G20XS-400AVT Power LDMOS transistor Rev.3 * 24 November 2017 Product data sheet 1.Product profile 1.1 General .
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz and 1930 MHz to 1995 M.

BLC9G20XS-400AVT Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability

BLC9G20XS-400AVT Applications

* at frequencies from 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32 V; IDq = 800 mA (main); VGS(amp)peak = 0.5 V, unless otherwise specified. Test signal f VDS PL(AV)

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Datasheet Details

Part number
BLC9G20XS-400AVT
Manufacturer
Ampleon
File Size
703.92 KB
Datasheet
BLC9G20XS-400AVT-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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