BLC9G20XS-550AVT Datasheet - Ampleon

BLC9G20XS-550AVT Power LDMOS transistor

550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 1100 mA (main); VGS(amp)peak = .

BLC9G20XS-550AVT Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent digital p

BLC9G20XS-550AVT-Ampleon.pdf