BLC9G20LS-120VT - Power LDMOS transistor
120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR5
BLC9G20LS-120VT Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
* Designed for broadband operation (1805 MHz to 1995 MHz)
* Lower output capacitance for
