BLF6G27L-50BN Power LDMOS transistor

Ampleon

Description

BLF6G27L-50BN Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

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Datasheet Specifications

Part number: BLF6G27L-50BN
Manufacturer: Ampleon
File Size: 362.05 KB
Datasheet: BLF6G27L-50BN-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Easy power control
* Integrated ESD protection
* Excellent ruggedness
* High efficiency
* Excellent thermal stability
* Designed for broadband operation (2500 MHz to 2700 MHz)
* Internally matched for ease of use
* Integrated current sense
* Compliant to Restric

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) 2-carrier W-CDMA 2500 to 2700 430 28 3 16.5 14.5 ACPR (dBc) 47 [1

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BLF6G27L-50BN Power LDMOS transistor Ampleon

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