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BLF6G27LS-75, BLF6G27-75 WiMAX power LDMOS transistor

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Description

BLF6G27-75; BLF6G27LS-75 WiMAX power LDMOS transistor Rev.01 * 22 October 2009 www.DataSheet4U.com Product data sheet 1.Product profile 1..
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

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This datasheet PDF includes multiple part numbers: BLF6G27LS-75, BLF6G27-75. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BLF6G27LS-75, BLF6G27-75
Manufacturer
NXP ↗ Semiconductors
File Size
312.45 KB
Datasheet
BLF6G27-75_NXPSemiconductors.pdf
Description
WiMAX power LDMOS transistor
Note
This datasheet PDF includes multiple part numbers: BLF6G27LS-75, BLF6G27-75.
Please refer to the document for exact specifications by model.

Features

* I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 28 V and an IDq of 600 mA: N

Applications

* at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS (V) 28 PL(AV) (W) 9 PL(M) Gp (W) 75 (dB) 17 ηD 23 ACPR885k ACPR1980k (dBc)

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