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BLF6G27LS-135, BLF6G27-135 Datasheet - NXP Semiconductors

BLF6G27-135_NXPSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLF6G27LS-135, BLF6G27-135. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF6G27LS-135, BLF6G27-135

Manufacturer:

NXP ↗ Semiconductors

File Size:

123.08 KB

Description:

Wimax power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF6G27LS-135, BLF6G27-135.
Please refer to the document for exact specifications by model.

BLF6G27LS-135, BLF6G27-135, WiMAX power LDMOS transistor

135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 2500 to 2700 VDS PL(AV) (V) 32 (W)

BLF6G27LS-135 Features

* I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MHz, a supply voltage of 32 V and an IDq of 1200 mA:

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