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BLM2312 - N-Channel Enhancement Mode Power MOSFET

BLM2312 Description

Pb Free Product BLM2312 N-Channel Enhancement Mode Power MOSFET .
The BLM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

BLM2312 Features

* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
BLM2312
Manufacturer
BELLING
File Size
409.90 KB
Datasheet
BLM2312-BELLING.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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