BLM2312 N-Channel Enhancement Mode Power MOSFET

BELLING

Description

Pb Free Product BLM2312 N-Channel Enhancement Mode Power MOSFET .
The BLM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: BLM2312
Manufacturer: BELLING
File Size: 409.90 KB
Datasheet: BLM2312-BELLING.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acquired

BLM2312 Distributors

📁 Related Datasheet

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N-Channel Enhancement Mode Power MOSFET BELLING

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