Part number:
2SD1913
Manufacturer:
BLUE ROCKET ELECTRONICS
File Size:
1.01 MB
Description:
Silicon npn transistor.
* ，，。 Wide ASO, low saturation voltage, high breakdown voltage. / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Q 70～140 R 100～200 S 140～
2SD1913
BLUE ROCKET ELECTRONICS
1.01 MB
Silicon npn transistor.
📁 Related Datasheet
2SD1910 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1910
..
DESCRIPTION ·With TO-3PFM package ·High br.
2SD1910 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Di.
2SD1911 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1911
..
DESCRIPTION ·With TO-3PFM package ·High br.
2SD1911 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Di.
2SD1912 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
..
..
.
2SD1912 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·Low Collector Sa.
2SD1913 - Power Transistor
(GME)
Power Transistor(60V,3A )
FEATURES
z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z M.
2SD1913 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Frequency Power Amplifier Applica.
