Part number:
3DG3901
Manufacturer:
BLUE ROCKET ELECTRONICS
File Size:
196.45 KB
Description:
Silicon npn transistor.
* With built-in bias resistors, small-sized package. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 50 V VCEO 50 V VEBO 5.0 V IC 100 mA ICP 200 mA PC 300 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO ICBO IEBO hFE VCE
3DG3901
BLUE ROCKET ELECTRONICS
196.45 KB
Silicon npn transistor.
📁 Related Datasheet
3DG3904 - NPN EPITAXIAL SILICON TRANSISTOR
(JILIN SINO)
NPN NPN EPITAXIAL SILICON TRANSISTOR
R
3DG3904
MAIN CHARACTERISTICS
Package
IC VCEO PC (TO-92) PC (SOT-23)
0.2A 40V 0.625W 0.350W
APPLICATIO.
3DG3001A1 - Silicon NPN bipolar transistor
(Huajing Microelectronics)
NPN
3DG3001 A1
○R
3DG3001 A1 NPN , , , 、 。
● ● ● ● ●
● ●
VCEO IC
Ptot (Ta=25℃)
450 0.8 0.8
V A W
TO-92
-10℃~40℃ 1 .
3DG3001A1-H - Silicon NPN Transistor
(Huajing Microelectronics)
3DG3001 A1-H NPN , , , 、。
NPN
3DG3001 A1-H
○R
● ● ● ● ●
● ●
VCEO IC
Ptot (Ta=25℃)
450 0.8 0.8
V A W
TO-92
-10℃~4.
3DG3020A1 - Silicon NPN bipolar transistor
(Huajing)
NPN
1 :
R ○
3DG3020A1
3DG3020A1 NPN ,, VCEO ,, IC 、。 Ptot (Ta=25℃) :TO-92, RoHS 。 TO-92
450 1.5 0.8
V A W
2 :
● ● ● ● ●
1
2
3
1. B.
3DG3020A1 - High Voltage Fast Switching NPN Power Transistor
(GME)
Production specification
High Voltage Fast Switching NPN Power Transistor
3DG3020A1
FEATURES
z z z z Low Switch dissipation Low Reverse Current Excel.
3DG3020A1-HK - Silicon NPN bipolar transistor
(Huajing Microelectronics)
NPN 3DG3020 A1-HK
○R
3DG3020 A1-HK NPN , , , 、。
● ● ● ● ●
● ● ●
-10℃~40℃ 1 265℃
<85%
VCEO IC
Ptot (Ta=25℃)
450 1.5 0.
3DG3332 - TO-92 Plastic-Encapsulate Transistors
(TY Semiconductor)
.
3DG3332 - NPN Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DG3332 TRANSISTOR (NPN)
FEATURES z Low Current z High Volta.