3DG3020A1
Huajing
192.62kb
Silicon npn bipolar transistor.
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3DG3020A1 - High Voltage Fast Switching NPN Power Transistor
(GME)
Production specification
High Voltage Fast Switching NPN Power Transistor
3DG3020A1
FEATURES
z z z z Low Switch dissipation Low Reverse Current Excel.
3DG3020A1-HK - Silicon NPN bipolar transistor
(Huajing Microelectronics)
NPN 3DG3020 A1-HK
○R
3DG3020 A1-HK NPN ， ， ， 、。
● ● ● ● ●
● ● ●
-10℃～40℃ 1 265℃
＜85％
VCEO IC
Ptot （Ta=25℃）
450 1.5 0.
3DG3001A1 - Silicon NPN bipolar transistor
(Huajing Microelectronics)
NPN
3DG3001 A1
○R
3DG3001 A1 NPN ， ， ， 、 。
● ● ● ● ●
● ●
VCEO IC
Ptot （Ta=25℃）
450 0.8 0.8
V A W
TO-92
-10℃～40℃ 1 .
3DG3001A1-H - Silicon NPN Transistor
(Huajing Microelectronics)
3DG3001 A1-H NPN ， ， ， 、。
NPN
3DG3001 A1-H
○R
● ● ● ● ●
● ●
VCEO IC
Ptot （Ta=25℃）
450 0.8 0.8
V A W
TO-92
-10℃～4.
3DG3332 - TO-92 Plastic-Encapsulate Transistors
(TY Semiconductor)
.
3DG3332 - NPN Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DG3332 TRANSISTOR (NPN)
FEATURES z Low Current z High Volta.
3DG3402 - NPN Transistor
(ETC)
3DG3402(2SC3402) NPN
PCM ICM Tjm
Tstg V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO
VCEsat
hFE
fT
TA=25℃
ICB=10μA ICE=100μA IEB=10μA VCB.
3DG3901 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC3901(3DG3901)
NPN /SILICON NPN DIGITAL TRANSISTOR
:、。
Purpose: Switching, interface circuit and driver circuit applications.
:,。
Features: With .
3DG3904 - NPN EPITAXIAL SILICON TRANSISTOR
(JILIN SINO)
NPN NPN EPITAXIAL SILICON TRANSISTOR
R
3DG3904
MAIN CHARACTERISTICS
Package
IC VCEO PC (TO-92) PC (SOT-23)
0.2A 40V 0.625W 0.350W
APPLICATIO.
3DG100 - NPN Silicon High Frequency Low Power Transistor
(Shaanxi Qunli)
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power Transistor
Featur.
