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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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10W 1. CV203CZ 10W 1.6 2. 2.1 ZIP5 CV203CZ B 3.5A 2.2 1 2 3 IN NF GND 4 OUT 5 VCC 14 0510 5807123-5542 14 0510 5803016 3. 3.1 DC 3.3 Tam

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ഀ‫ݾ‬Ԩা CD7388CZ 4u41W ୺к࿛ູٟ৑ׂӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ໻⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ࡯˄᳔໻ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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Silicon N-Channel Power MOSFET CS7N65 A4R ○R General Description： CS7N65 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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NPN T2095-H ○R T2095 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Ta=25℃） 450 0.8 0.8 V A W TO-92 -10℃～40℃ 1 265℃

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Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integr

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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NPN 3DD4520 A4 ○R 3DD4520 A4 NPN ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Tc=25℃） 450 2 35 V A W TO-252 -10℃～40℃

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NPN 3DD13003 U1D ○R 3DD13003 U1D NPN ， ， ， ， 、。 ● ● ● ● ● ● ● ● VCEO IC Ptot （Ta=25℃） 200 1.8 0.8 V A W TO-92

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Silicon N-Channel Power MOSFET CS640 A0H ○R General Description： CS640 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET CS10N60F A9HD ○R General Description： CS10N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s

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Silicon N-Channel Power MOSFET CS3N80 ARH ○R General Description： CS3N80 ARH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS5N20F A9 ○R General Description： VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A VDMOSFETs, is

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