BTC301N Datasheet, Tube, BORN

BTC301N Features

  • Tube
  • Non-Radioactive
  • RoHS compliant
  • Ultra low capacitance (<0.5pF)
  • UL recognized
  • Excellent response to fast rising transients
  • 0.5K

PDF File Details

Part number:

BTC301N

Manufacturer:

BORN

File Size:

253.84kb

Download:

📄 Datasheet

Description:

Gas discharge tube. Gas discharge Tubes (GDT) are classical components for protecting the installations of the telecommunications. It is essential that I

Datasheet Preview: BTC301N 📥 Download PDF (253.84kb)
Page 2 of BTC301N Page 3 of BTC301N

BTC301N Application

  • Applications The capacitance does not vary with voltage, and will not cause operational problems with ADSL2+, where capacitance variation across Ti

TAGS

BTC301N
Gas
Discharge
Tube
BORN

📁 Related Datasheet

BTC30010-1TAA - Smart High-Side Power Connector (Infineon)
BTC50010-1TAA & BTC30010-1TAA Smart High-Side Power Connector 2x Single Channel, 2x 1mΩ Data Sheet 1.3, 2015-02-06 Automotive Power BTC50010-1TAA & B.

BTC3097J3 - High Voltage NPN Triple Diffused Planar Transistor (CYStech)
CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3097J3 Spec. No. : C663J3 Issued Date : 2015.09.14 Revised Date : Pag.

BTC3097T3 - High Voltage NPN Triple Diffused Planar Transistor (CYStech)
CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3097T3 Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page.

BTC3149E3 - High Voltage NPN Triple Diffused Planar Transistor (CYStech)
CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3149E3 Spec. No. : C663E3 Issued Date : 2012.02.13 Revised Date : Pag.

BTC3356N3 - NPN Silicon Epitaxial Planar Transistor (CYStech)
CYStech Electronics Corp. Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor BTC3356N3 Spec. No. : C622N3 Issued Date : 2013.03.06.

BTC3415A3 - High Voltage NPN Epitaxial Planar Transistor (Cystech Electonics Corp)
CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC3415A3 Spec. No. : C209A3 Issued Date : 2008.01.25 Revised Date : 2014.03.0.

BTC351N - Gas Discharge Tube (BORN)
Gas Discharge Tube SMD1812 BTC Series ROHS Description Gas discharge Tubes (GDT) are classical ponents for protecting the installations of the t.

BTC3838N3 - NPN Transistor (Cystech Electonics Corp)
CYStech Electronics Corp. High Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Spec. No. : C206N3 .. Issued Date : 2004.09.23 Rev.

BTC3906L3 - NPN Transistor (Cystech Electonics Corp)
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208L3 .. Issued Date : 2004.09.21 Revised Dat.

BTC3906M3 - NPN Transistor (Cystech Electonics Corp)
CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208M3 .. Issued Date : 2003.08.18 Revised Dat.

Stock and price

TE Connectivity
100P607-08-1-B-TC3-01-NM by TE CONNECTIVITY is a circular connector designed for reliable electrical connections in various applications, ensuring durability and performance.
IBS Electronics
100P607-08-1-B-TC3-01-NM
3 In Stock
Qty : 1 units
Unit Price : $179.08
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts