BF9060BSNL - N-Channel MOSFET

BYD

Datasheet Details

This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

z VDS =60 V z ID =100A z Typical RDS(ON) =4.5 m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS Single Pulse Avalanche Energy IAR Avalanche Current PD TJ,Tstg TL Power Dissipation (TC = 25°C) Operating junction and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose （.

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Published: Apr 12, 2017 |