BF9060BSNL Datasheet - BYD

BF9060BSNL, N-Channel MOSFET

BYD Microelectronics Co., Ltd.BF9060BSNL 60V N-Channel MOSFET General .
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

Features

* z VDS =60 V z ID =100A z Typical RDS(ON) =4.5 m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage E

BF9060BSNL-BYD.pdf