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BH62UV8001 Ultra Low Power/High Speed CMOS SRAM

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Description

Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit Green package materials are compliant to RoHS www.DataSheet4U.com BH62UV8001 n .
The BH62UV8001 is a high performance, ultra low power CMOS Static Random Access Memory organized as 1,048,576 by 8 bits and operates in a wide range o.

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Datasheet Specifications

Part number
BH62UV8001
Manufacturer
Brilliance Semiconductor
File Size
173.65 KB
Datasheet
BH62UV8001_BrillianceSemiconductor.pdf
Description
Ultra Low Power/High Speed CMOS SRAM

Features

* Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. )at 55ns 2mA (Max. ) at 1MHz Standby current : 2.5uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 1.2uA (Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=

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