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BD235 - EPITAXIAL SILICON POWER TRANSISTORS

This page provides the datasheet information for the BD235, a member of the BD233 EPITAXIAL SILICON POWER TRANSISTORS family.

Datasheet Summary

Description

Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC

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Datasheet preview – BD235

Datasheet Details

Part number BD235
Manufacturer CDIL
File Size 94.54 KB
Description EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet BD235 Datasheet
Additional preview pages of the BD235 datasheet.
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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage (RBE=1KΩ) Emitter Base Voltage Collector Current Collector Peak Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCER VEBO IC ICM PD PD Tj, Tstg BD233 BD234 45 45 45 BD235 BD236 60 60 60 5.0 2.0 6.0 25 1.
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