NE678M04 Datasheet, Transistor, CEL

NE678M04 Features

• Transistor
• Ideal for medium output power amplification
• PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
• HFT3 technology (fT = 12 GHz) adopted

PDF File Details

Part number:

NE678M04

Manufacturer:

CEL

File Size:

438.99kb

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📄 Datasheet

Description:

Npn silicon rf transistor.

TAGS

NE678M04

CEL

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