* Ideal for medium output power amplification
* PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
* HFT3 technology (fT = 12 GHz) adopted
* High reliability through use of gold electrodes
* Flat-lead 4-pin thin-type super minimold package ORDE
NE678M04 Datasheet (438.99 KB)
NE678M04
CEL
438.99 KB
Npn silicon rf transistor.
NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-P.
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