NE678M04 Datasheet - CEL

NE678M04 NPN SILICON RF TRANSISTOR

NE678M04 Features

* Ideal for medium output power amplification

* PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

* HFT3 technology (fT = 12 GHz) adopted

* High reliability through use of gold electrodes

* Flat-lead 4-pin thin-type super minimold package ORDE

Datasheet Details

NE678M04

CEL

438.99 KB

Npn silicon rf transistor.

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NE678M04 NPN SILICON TRANSISTOR CEL

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