CEH3688
CET
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N-channel mosfet.
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CEH3456 - N-Channel Enhancement Mode Field Effect Transistor
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CEH3456
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 5.5A, RDS(ON) = 42mΩ @VGS = 10V. RDS(ON) = 59mΩ @VGS = 4.5V. High dense cell .
CEH2288 - N-Channel MOSFET
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CEH2288
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 5.2A , RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V.
High dense c.
CEH2305 - P-Channel Enhancement Mode Field Effect Transistor
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CEH2305
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -4.9A , RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.
CEH2307 - P-Channel MOSFET
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CEH2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -4A , RDS(ON) = 78mΩ @VGS = -10V. RDS(ON) = 120mΩ @VGS = -4.5V.
High dense.
CEH2310 - N-Channel Enhancement Mode Field Effect Transistor
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.DataSheet.co.kr
CEH2310
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 6.2A , RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = .
CEH2311 - P-Channel Enhancement Mode Field Effect Transistor
(CET)
CEH2311
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V.
RDS(ON) = 130mΩ @VGS = -2.5V. High dens.
CEH2312 - N-Channel MOSFET
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CEH2312
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 6.2A , RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 45mΩ @VGS = 2.5V.
CEH2313 - P-Channel Enhancement Mode Field Effect Transistor
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CEH2313
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -4.6A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. High dense c.
CEH2316 - N-Channel Enhancement Mode Field Effect Transistor
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CEH2316
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell d.
CEH2321 - P-Channel Enhancement Mode Field Effect Transistor
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CEH2321
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -4.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 80mΩ @VGS = -2.5V. High dense .