CRTB360N06L-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET CRTB360N06L-G General .
VDSS 60 V CRTB360N06L-G, the silicon N-channel Enhanced ID 7 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 2.

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Datasheet Specifications

Part number: CRTB360N06L-G
Manufacturer: CR Micro
File Size: 1.24 MB
Datasheet: CRTB360N06L-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* l Power switch circuit of adaptor and charger. l Synchronus Rectification in DC/DC Converters Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current TA = 25 °C Continuous Drain Current TA = 100 °C Pulse

CRTB360N06L-G Distributors

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CRTB360N06L-G Silicon N-Channel Power MOSFET CR Micro

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