Part number:
CRTB360N06L-G
Manufacturer:
CR Micro
File Size:
1.24 MB
Description:
Silicon n-channel power mosfet.
Datasheet Details
VDSS 60 V CRTB360N06L-G, the silicon N-channel Enhanced ID 7 A VDMOSFETs, is obtained by the high density Trench technology PD(Ta=25℃) 2.6 W which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=10V 26 mΩ performance and enhance the avalanche energy.
The transistor RDS(
CRTB360N06L-G Features
* l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free Applications： l Power switch circuit of adaptor and charger. l Synchronus Rectification in DC/DC Converters Absolute（TA= 25℃ unless otherwise sp
Datasheet Details
CRTB360N06L-G
CR Micro
1.24 MB
Silicon n-channel power mosfet.
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