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CRTD210P04L2-G Silicon P-Channel Power MOSFET

CRTD210P04L2-G Description

Silicon P-Channel Power MOSFET CRTD210P04L2-G General .
CRTD210P04L2-G, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.

CRTD210P04L2-G Features

* Fast Switching
* Low ON Resistance(Rdson≤21 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

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Datasheet Details

Part number
CRTD210P04L2-G
Manufacturer
CR Micro
File Size
1.16 MB
Datasheet
CRTD210P04L2-G-CRMicro.pdf
Description
Silicon P-Channel Power MOSFET

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Silicon P-Channel Power MOSFET CR Micro
CR Micro CRTD210P04L2-G-like datasheet