Datasheet4U Logo Datasheet4U.com

CRTD210P04L2-G Datasheet - CR Micro

Silicon P-Channel Power MOSFET

CRTD210P04L2-G Features

* Fast Switching

* Low ON Resistance(Rdson≤21 mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ TO-252 -40 V -40 A 48 W 16 mΩ

CRTD210P04L2-G General Description

CRTD210P04L2-G, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO.

CRTD210P04L2-G Datasheet (1.16 MB)

Preview of CRTD210P04L2-G PDF

Datasheet Details

Part number:

CRTD210P04L2-G

Manufacturer:

CR Micro

File Size:

1.16 MB

Description:

Silicon p-channel power mosfet.

📁 Related Datasheet

CRTD200N06L2-G Trench N-MOSFET (CR Micro)

CRTD220N10L2-G Trench N-MOSFET (CR Micro)

CRTD019N03L2-G Silicon N-Channel Power MOSFET (CR Micro)

CRTD028N03L2-G Silicon N-Channel Power MOSFET (CR Micro)

CRTD028N04L2-G Silicon N-Channel Power MOSFET (CR Micro)

CRTD030N03L 30V Trench N-MOSFET (CR Micro)

CRTD030N04L 40V Trench N-MOSFET (CR Micro)

CRTD032N03L2P Silicon N-Channel Power MOSFET (CR Micro)

CRTD034N04L2-G Silicon N-Channel Power MOSFET (CR Micro)

CRTD039N04L2-G Silicon N-Channel Power MOSFET (CR Micro)

TAGS

CRTD210P04L2-G Silicon P-Channel Power MOSFET CR Micro

Image Gallery

CRTD210P04L2-G Datasheet Preview Page 2 CRTD210P04L2-G Datasheet Preview Page 3

CRTD210P04L2-G Distributor