CRTK080P03L2P - Silicon P-Channel Power MOSFET
CRTK080P03L2P, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is VDSS ID（Silicon limited current） ID（Package limited current） PD RDS(ON)Typ -3
CRTK080P03L2P Features
* Fast Switching
* Low ON Resistance(Rdson≤7.5mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS
