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CRTK700N10S-G Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET CRTK700N10S-G General .
CRTK700N10S-G the silicon N-channel Enhanced VDSS 100 VDMOSFETs, is obtained by the high density Trench technology ID 13 which reduce the conduc.

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Datasheet Specifications

Part number
CRTK700N10S-G
Manufacturer
CR Micro
File Size
812.00 KB
Datasheet
CRTK700N10S-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance (Rdson≤70mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute(Tj= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ,Tstg Drain-to-Source Voltage Continuous Drain Current Tc = 25 °C Continuous Drain Current Tc = 100 °C Pulsed Drain Current Tc = 25 °C Gate-to-Source Voltage

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