CS130N10A0 - Silicon N-Channel Power MOSFET
CS130N10 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
This device is suitable for use as a load switch and PWM applications.
The package form is TO-26
CS130N10A0 Features
* l Fast Switching l Low ON Resistance(Rdson≤8.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 100 V 130 A 120 A 266 W 6.7 mΩ Applications： Power switch circuit of adaptor, char
