CS16N06AE-G Datasheet - CR Micro

CS16N06AE-G Silicon N-Channel Power MOSFET

CS16N06 AE-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS16N06AE-G Features

* l Fast Switching l Low ON Resistance (Rdson≤10mΩ) l Low Gate Charge (Typical Data: 88.8nC) l Low Reverse transfer capacitances(Typical:220pF) l 100% Single Pulse avalanche energy Test l Halogen free Applications： Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specif

CS16N06AE-G-CRMicro.pdf