CS16N06AE-G
CR Micro
1.26MB
Silicon n-channel power mosfet. CS16N06 AE-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduct
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CS1615M1A
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Package
IT(RMS) VDRM/VRRM IGT
16A 600V/800V
1-15mA
Thyristors(SCR)
APPLICATIONS
Half AC switching .