CS16N06AE-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power Trench MOSFET ○R CS16N06 AE-G General .
CS16N06 AE-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CS16N06AE-G
Manufacturer: CR Micro
File Size: 1.26 MB
Datasheet: CS16N06AE-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanch

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CS16N06AE-G Silicon N-Channel Power MOSFET CR Micro

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