CS16N60FA9H - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number	CS16N60FA9H
Manufacturer	Huajing Microelectronics
File Size	305.53 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS16N60FA9H-HuajingMicroelectronics.pdf

CS16N60FA9H Product details

Description

CS16N60F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard..

Features

l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |