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CS16N65A8H

Silicon N-Channel Power MOSFET

CS16N65A8H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.55Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa

CS16N65A8H General Description

CS16N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 16 180 0.49 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS16N65A8H Datasheet (429.95 KB)

Preview of CS16N65A8H PDF

Datasheet Details

Part number:

CS16N65A8H

Manufacturer:

Huajing Microelectronics

File Size:

429.95 KB

Description:

Silicon n-channel power mosfet.

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CS16N65A8H Silicon N-Channel Power MOSFET Huajing Microelectronics

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