CS20N65ANH - Silicon N-Channel Power MOSFET
VDSS 650 CS20N65 ANH, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 250 RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various
CS20N65ANH Features
* l Fast Switching l Low ON Resistance(Rdson≤0.5Ω) l Low Gate Charge (Typical Data:65nC) l Low Reverse transfer capacitances(Typical: 20pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param
