Datasheet Details
| Part number | CS21N06A3 | 
|---|---|
| Manufacturer | CR Micro | 
| File Size | 440.93 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet | 
        
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		  | Part number | CS21N06A3 | 
|---|---|
| Manufacturer | CR Micro | 
| File Size | 440.93 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet | 
        
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VDSS 60 CS21N06 A3, the silicon N-channel Enhanced ID 21 VDMOSFETs, is obtained by the high density Trench PD 31 technology which reduce the conduction loss, improve switching RDS(ON)Typ 33 performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications..The package form is TO-251, which accords with the RoHS standard.
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