CS21N06A3 Datasheet - CR Micro

CS21N06A3 - Silicon N-Channel Power MOSFET

VDSS 60 CS21N06 A3, the silicon N-channel Enhanced ID 21 VDMOSFETs, is obtained by the high density Trench PD 31 technology which reduce the conduction loss, improve switching RDS(ON)Typ 33 performance and enhance the avalanche energy. This device is suitable for use as a load switch and.

CS21N06A3 Features

* l Fast Switching l Low ON Resistance(Rdson≤45mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. ○R V A W mΩ Absolute（Tj= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VG

CS21N06A3-CRMicro.pdf

CS21N06A3 Datasheet Preview — Preview of CS21N06A3 PDF

Datasheet Details

Part number:

CS21N06A3

Manufacturer:

CR Micro

File Size:

440.93 KB

Description:

Silicon n-channel power mosfet.

CS21N06A3 Distributor

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CS21N06A3 Silicon N-Channel Power MOSFET CR Micro